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JAN1N6474US/TR

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JAN1N6474US/TR

TVS DIODE 30.5VWM 47.5VC G-MELF

Manufacturer: Microchip Technology

Categories: TVS Diodes

Quality Control: Learn More

Microchip Technology JAN1N6474US-TR is a unidirectional TVS diode designed for transient voltage suppression. This military-grade component, qualified to MIL-PRF-19500/552, features a reverse standoff voltage of 30.5V and a breakdown voltage of 33V. It offers a clamping voltage of 47.5V at a peak pulse current of 181A (8/20µs), with a peak pulse power rating of 1500W. The JAN1N6474US-TR is housed in a G-MELF (D-5C) package for surface mounting and is supplied in tape and reel (TR). Operating across a temperature range of -55°C to 175°C, this device is suitable for general-purpose applications requiring robust protection against voltage surges.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, G
Mounting TypeSurface Mount
TypeZener
Operating Temperature-55°C ~ 175°C (TJ)
ApplicationsGeneral Purpose
Capacitance @ Frequency-
Current - Peak Pulse (10/1000µs)181A (8/20µs)
Voltage - Reverse Standoff (Typ)30.5V
Supplier Device PackageG-MELF (D-5C)
Unidirectional Channels1
Voltage - Breakdown (Min)33V
Voltage - Clamping (Max) @ Ipp47.5V
Power - Peak Pulse1500W (1.5kW)
Power Line ProtectionNo
GradeMilitary
QualificationMIL-PRF-19500/552

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