WS512K8L-25CQ
SRAM Module, 512KX8, 25ns, CMOS, CDIP32Manufacturer: Microchip Technology
Categories: SRAMs
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Microchip Technology WS512K8L-25CQ is a CMOS SRAM module with a 512K x 8 organization, providing a total memory density of 4 Mbit. This asynchronous SRAM features a maximum access time of 25ns and operates from a nominal supply voltage of 5V, with a range of 4.5V to 5.5V. The component is housed in a 32-terminal ceramic dual in-line package (CDIP32, JESD-30 Code R-CDIP-T32) suitable for through-hole mounting. Its robust construction, with a ceramic, metal-sealed cofired package, ensures reliable operation across an extended temperature range of -55°C to +125°C. This memory component is often utilized in demanding applications within the aerospace, defense, and industrial sectors requiring high reliability and performance.
Additional Information
Series: WS512K8RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 25.0000000000000000 |
| JESD_30_Code | R-CDIP-T32 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | SRAM MODULE |
| Memory_Organization | 512KX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 32 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.500 |
| Terminal_Position | Dual |
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