MM0-65609EV-40-E
Standard SRAM, 128KX8, 40ns, CMOSManufacturer: Microchip Technology
Categories: SRAMs
Quality Control: Learn More
Microchip Technology MM0-65609EV-40-E is a standard asynchronous CMOS SRAM with a memory organization of 128K x 8 bits, providing a total density of 1Mb. This device features a maximum access time of 40ns and operates from a nominal supply voltage of 3.3V, with a range of 3.0V to 3.6V. The MM0-65609 series component is supplied as an uncased chip (die) in a rectangular package. It is designed for reliable operation across a wide temperature range from -55°C to +125°C and offers a total dose radiation tolerance of 200k Rad(Si). Its robust specifications make it suitable for applications in aerospace, defense, and high-reliability industrial systems requiring dependable data storage.
Additional Information
Series: MM0-65609RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 40.0000000000000000 |
| JESD_30_Code | R-XUUC-N |
| Memory_Density | 1048576.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 128KX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Words | 131072.0000000000000000 |
| Number_of_Words_Code | 128K |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | Die |
| Package_Shape | Rectangular |
| Package_Style | UNCASED CHIP |
| Parallel_Serial | Parallel |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | NO LEAD |
| Terminal_Position | UPPER |
| Total_Dose | 200k Rad(Si) |
Request a Quote
Clients Also Buy
MM0-65609EV-40SV
Standard SRAM, 128KX8, 40ns, CMOS
5962-8959813MMX
Standard SRAM, 128KX8, 120ns, CMOS, CQCC32
AT60142HT-DS15ESCC
Standard SRAM, 512KX8, 15ns, CMOS, PDFP36