5962-9560012QZX
Standard SRAM, 512KX8, 20ns, CMOSManufacturer: Microchip Technology
Categories: SRAMs
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Microchip Technology's 88512 series asynchronous SRAM, part number 5962-9560012QZX, offers a 512K x 8 memory organization with a total density of 4Mb. This CMOS component features a maximum access time of 20ns and operates within a temperature range of -55°C to +125°C, meeting MIL-STD-883 Class B (Modified) screening requirements. The device is designed for surface mounting with a 32-terminal, rectangular SON (Small Outline No Lead) package. Typical applications include high-reliability systems in aerospace, defense, and industrial sectors demanding robust memory solutions. The supply voltage range is 4.5V to 5.5V.
Additional Information
Series: 88512RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Length | 20.9550 |
| Width | 11.4300 |
| Technology | CMOS |
| Access_Time_Max | 20.0000000000000000 |
| JESD_30_Code | R-XDSO-N32 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 512KX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 32 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | SON |
| Package_Shape | Rectangular |
| Package_Style | SMALL OUTLINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-STD-883 Class B (Modified) |
| Seated_Height_Max | 2.5400 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | NO LEAD |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Dual |
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