5962-9560011QXX
Standard SRAM, 512KX8, 25ns, CMOS, CDIP32Manufacturer: Microchip Technology
Categories: SRAMs
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Microchip Technology 88512 series asynchronous CMOS SRAM, part number 5962-9560011QXX, offers a 512K x 8 memory organization with a 25ns access time. This component is housed in a 32-lead Ceramic Dual In-line Package (CDIP), specifically conforming to the R-CDIP-T32 standard. Engineered for demanding environments, it operates across a temperature range of -55°C to +125°C and supports a supply voltage between 4.5V and 5.5V. The MIL-PRF-38535 Class Q screening level ensures high reliability for applications in aerospace, defense, and industrial control systems requiring robust memory solutions. Its through-hole mounting and parallel interface facilitate integration into established board designs.
Additional Information
Series: 88512RoHS Status: Manufacturer Lead Time: Product Status: ActivePackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Width | 15.2400 |
| Technology | CMOS |
| Length | 41.9100 |
| Access_Time_Max | 25.0000000000000000 |
| JESD_30_Code | R-CDIP-T32 |
| Memory_Density | 4194304.0000000000000000 |
| Memory_IC_Type | STANDARD SRAM |
| Memory_Organization | 512KX8 |
| Memory_Width | 8 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 32 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Code | DIP |
| Package_Shape | Rectangular |
| Package_Style | IN-LINE |
| Parallel_Serial | Parallel |
| Screening_Level_Reference_Standard | MIL-PRF-38535 Class Q |
| Seated_Height_Max | 5.1000 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | No |
| Terminal_Form | THROUGH-HOLE |
| Terminal_Pitch | 2.540 |
| Terminal_Position | Dual |
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