JANTXV1N6312US
DIODE ZENER 3.3V 500MW DO35Manufacturer: Microchip Technology
Categories: Single Zener Diodes
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Microchip Technology JANTXV1N6312US is a Zener diode with a nominal breakdown voltage of 3.3 V and a power rating of 500 mW. This component features a ±5% tolerance, a reverse leakage of 5 µA at 1 V, and a maximum Zener impedance of 27 Ohms. The JANTXV1N6312US is housed in a DO-204AH (DO-35) axial package, suitable for through-hole mounting. Operating across a wide temperature range of -65°C to 175°C, this diode meets MIL-PRF-19500/533 qualification, indicating its suitability for demanding military applications. Its forward voltage is specified at a maximum of 1.4 V at 1 A. This component is commonly found in aerospace, defense, and industrial control systems requiring high reliability.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Tolerance | ±5% |
| Packaging | Bulk |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 175°C |
| Voltage - Zener (Nom) (Vz) | 3.3 V |
| Impedance (Max) (Zzt) | 27 Ohms |
| Supplier Device Package | DO-204AH (DO-35) |
| Grade | Military |
| Power - Max | 500 mW |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1 V |
| Qualification | MIL-PRF-19500/533 |
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