JANS1N6310US
DIODE ZENER 2.7V 500MW MELFManufacturer: Microchip Technology
Categories: Single Zener Diodes
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Microchip Technology JANS1N6310US is a JANS qualified Zener diode with a nominal breakdown voltage of 2.7V. This component offers a power dissipation of 500 mW and a tight tolerance of ±5%. It features a low reverse leakage current of 60 µA at 1V and a maximum Zener impedance (Zzt) of 30 Ohms. The diode is housed in a B, SQ-MELF surface mount package, designed for robust performance in demanding environments. Operating temperature ranges from -65°C to 175°C, and it meets the MIL-PRF-19500/533 qualification. Applications for this device include regulated power supplies and voltage clamping circuits within the aerospace and defense industries.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Tolerance | ±5% |
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 175°C |
| Voltage - Zener (Nom) (Vz) | 2.7 V |
| Impedance (Max) (Zzt) | 30 Ohms |
| Supplier Device Package | B, SQ-MELF |
| Grade | Military |
| Power - Max | 500 mW |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 1 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 1 V |
| Qualification | MIL-PRF-19500/533 |