APT75GN60SDQ2G
IGBT TRENCH FS 600V 155A D3PAKManufacturer: Microchip Technology
Categories: Single IGBTs
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The Microchip Technology APT75GN60SDQ2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power conversion. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 155 A, with a pulsed capability of 225 A. The device offers a maximum power dissipation of 536 W and a low on-state voltage (Vce(on)) of 1.85 V at 15 V gate-emitter voltage and 75 A collector current. Key switching parameters include a gate charge of 485 nC and a reverse recovery time (trr) of 25 ns. Switching energy is specified at 2.5 mJ (turn-on) and 2.14 mJ (turn-off) under test conditions of 400 V, 75 A, 1 Ohm, and 15 V. Packaged in a surface-mount D3PAK (TO-268-3, D3PAK (2 Leads + Tab), TO-268AA), this IGBT operates within an extended temperature range of -55°C to 175°C (TJ). It is commonly employed in power factor correction circuits, motor control, and power supplies across industrial and automotive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 75A |
| Supplier Device Package | D3PAK |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 47ns/385ns |
| Switching Energy | 2.5mJ (on), 2.14mJ (off) |
| Test Condition | 400V, 75A, 1Ohm, 15V |
| Gate Charge | 485 nC |
| Current - Collector (Ic) (Max) | 155 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 225 A |
| Power - Max | 536 W |
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