APT75GN60LDQ3G
IGBT TRENCH FS 600V 155A TO264Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT75GN60LDQ3G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a collector-emitter breakdown voltage of 600 V and can handle a continuous collector current (Ic) of up to 155 A at a maximum power dissipation of 536 W. The device exhibits a low on-state voltage (Vce(on)) of 1.85 V at 15 V gate-emitter voltage and 75 A collector current. Switching characteristics include turn-on and turn-off delays of 47 ns and 385 ns respectively, with switching energies of 2500 µJ (on) and 2140 µJ (off) at the specified test conditions (400 V, 75 A, 1 Ohm, 15 V). The APT75GN60LDQ3G is housed in a TO-264 package, facilitating through-hole mounting. This IGBT is suitable for use in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 75A |
| Supplier Device Package | TO-264 [L] |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 47ns/385ns |
| Switching Energy | 2500µJ (on), 2140µJ (off) |
| Test Condition | 400V, 75A, 1Ohm, 15V |
| Gate Charge | 485 nC |
| Current - Collector (Ic) (Max) | 155 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 225 A |
| Power - Max | 536 W |
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