APT75GN60BG
IGBT TRENCH FS 600V 155A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT75GN60BG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 155 A, with a pulsed current rating of 225 A. The device offers a maximum power dissipation of 536 W and a low on-state voltage of 1.85 V at 75 A and 15 V gate-emitter voltage. With a gate charge of 485 nC and switching energy figures of 2500 µJ (on) and 2140 µJ (off), optimizing switching efficiency is facilitated. The IGBT is housed in a TO-247-3 package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 175°C (TJ). Typical applications include motor control, power supplies, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 75A |
| Supplier Device Package | TO-247 [B] |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 47ns/385ns |
| Switching Energy | 2500µJ (on), 2140µJ (off) |
| Test Condition | 400V, 75A, 1Ohm, 15V |
| Gate Charge | 485 nC |
| Current - Collector (Ic) (Max) | 155 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 225 A |
| Power - Max | 536 W |
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