APT75GN60BDQ2G
IGBT TRENCH FS 600V 155A TO247-3Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT75GN60BDQ2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a collector-emitter breakdown voltage of 600V and a maximum continuous collector current (Ic) of 155A, with a pulsed capability of 225A. The device offers a maximum power dissipation of 536W and a low on-state voltage (Vce(on)) of 1.85V at 15V gate-emitter voltage and 75A collector current. Key switching characteristics include a gate charge of 485 nC, switching energies of 2.5mJ (on) and 2.14mJ (off), and typical turn-on and turn-off delays of 47ns and 385ns respectively, under specified test conditions. Operating across a temperature range of -55°C to 175°C (TJ), this IGBT is housed in a TO-247-3 package suitable for through-hole mounting. It finds application in power conversion systems and motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 25 ns |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 75A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 47ns/385ns |
| Switching Energy | 2.5mJ (on), 2.14mJ (off) |
| Test Condition | 400V, 75A, 1Ohm, 15V |
| Gate Charge | 485 nC |
| Current - Collector (Ic) (Max) | 155 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 225 A |
| Power - Max | 536 W |
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