APT75GN120LG
IGBT TRENCH FS 1200V 200A TO264Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT75GN120LG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component features a collector-emitter voltage (Vce) rating of 1200 V and a continuous collector current (Ic) capability of 200 A, with a pulsed capability of 225 A. It offers a maximum power dissipation of 833 W and a low on-state voltage (Vce(on)) of 2.1V at 15V gate-emitter voltage and 75A collector current. The device exhibits typical turn-on delay and fall time characteristics of 60 ns and 620 ns respectively, with switching energy figures of 8620 µJ (on) and 11400 µJ (off) under test conditions of 800V, 75A, 1 Ohm, and 15V. With a gate charge of 425 nC and an operating temperature range from -55°C to 150°C (TJ), the APT75GN120LG is housed in a TO-264 package, suitable for through-hole mounting. This IGBT is commonly utilized in industrial motor drives, power factor correction, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| Supplier Device Package | TO-264 [L] |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 60ns/620ns |
| Switching Energy | 8620µJ (on), 11400µJ (off) |
| Test Condition | 800V, 75A, 1Ohm, 15V |
| Gate Charge | 425 nC |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 225 A |
| Power - Max | 833 W |
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