APT75GN120B2G
IGBT TRENCH FIELD STP 1200V 200AManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT75GN120B2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a Collector-Emitter Voltage (Vce) of 1200V and a continuous Collector Current (Ic) capability of 200A, with a pulsed current rating (Icm) of 225A. The maximum power dissipation is 833W. Key electrical characteristics include a Gate Charge of 425 nC and a low on-state voltage (Vce(on)) of 2.1V at 15V gate-source voltage and 75A collector current, specified under test conditions of 800V, 75A, 1 Ohm, and 15V. Switching performance is indicated by a turn-on delay (Td(on)) of 60ns and turn-off delay (Td(off)) of 620ns at 25°C. The device is housed in a TO-247-3 Variant package suitable for through-hole mounting and operates within a temperature range of -55°C to 150°C. This IGBT is utilized in demanding sectors such as industrial power supplies and motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 75A |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 60ns/620ns |
| Switching Energy | 8045µJ (on), 7640µJ (off) |
| Test Condition | 800V, 75A, 1Ohm, 15V |
| Gate Charge | 425 nC |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 225 A |
| Power - Max | 833 W |
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