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APT50GT120LRDQ2G

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APT50GT120LRDQ2G

IGBT NPT 1200V 106A TO264

Manufacturer: Microchip Technology

Categories: Single IGBTs

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Microchip Technology's APT50GT120LRDQ2G is a high-performance NPT Thunderbolt IGBT® with a collector-emitter voltage (Vce) of 1200V. This through-hole component, housed in a TO-264 package, offers a continuous collector current (Ic) of 106A and a pulsed collector current (Icm) of 150A. The device features a maximum power dissipation of 694W and a gate charge of 240 nC. Key switching characteristics include a typical turn-on delay (Td(on)) of 23ns and turn-off delay (Td(off)) of 215ns at 25°C, with switching energies of 2585µJ (on) and 1910µJ (off) under test conditions of 800V, 50A, 1Ohm, and 15V. The on-state voltage drop (Vce(on)) is a maximum of 3.7V at 15V gate-source voltage and 50A collector current. This IGBT is suitable for demanding applications in power factor correction, motor drives, and industrial power supplies. It operates within an ambient temperature range of -55°C to 150°C (TJ).

Additional Information

Series: Thunderbolt IGBT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 50A
Supplier Device PackageTO-264 [L]
IGBT TypeNPT
Td (on/off) @ 25°C23ns/215ns
Switching Energy2585µJ (on), 1910µJ (off)
Test Condition800V, 50A, 1Ohm, 15V
Gate Charge240 nC
Current - Collector (Ic) (Max)106 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)150 A
Power - Max694 W

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