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APT50GT120B2RDQ2G

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APT50GT120B2RDQ2G

IGBT NPT 1200V 94A TO247

Manufacturer: Microchip Technology

Categories: Single IGBTs

Quality Control: Learn More

The Microchip Technology Thunderbolt IGBT® APT50GT120B2RDQ2G is a high-efficiency NPT IGBT designed for demanding power applications. This component offers a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 94A, with a pulsed current capability of 150A. It features a low on-state voltage (Vce(on)) of 3.7V at 15V gate-emitter voltage and 50A collector current, crucial for minimizing conduction losses. With a maximum power dissipation of 625W and a switching energy (Eoff) of 2330µJ at 800V, 50A, this IGBT is well-suited for applications requiring robust performance and efficiency. The standard input type and a gate charge of 340 nC facilitate straightforward drive circuitry. Operating across a wide temperature range of -55°C to 150°C (TJ), the APT50GT120B2RDQ2G is packaged in a TO-247-3 through-hole mount, making it suitable for power factor correction, motor drives, and uninterruptible power supplies.

Additional Information

Series: Thunderbolt IGBT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 50A
IGBT TypeNPT
Td (on/off) @ 25°C24ns/230ns
Switching Energy2330µJ (off)
Test Condition800V, 50A, 4.7Ohm, 15V
Gate Charge340 nC
Current - Collector (Ic) (Max)94 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)150 A
Power - Max625 W

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