APT50GT120B2RDQ2G
IGBT NPT 1200V 94A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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The Microchip Technology Thunderbolt IGBT® APT50GT120B2RDQ2G is a high-efficiency NPT IGBT designed for demanding power applications. This component offers a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 94A, with a pulsed current capability of 150A. It features a low on-state voltage (Vce(on)) of 3.7V at 15V gate-emitter voltage and 50A collector current, crucial for minimizing conduction losses. With a maximum power dissipation of 625W and a switching energy (Eoff) of 2330µJ at 800V, 50A, this IGBT is well-suited for applications requiring robust performance and efficiency. The standard input type and a gate charge of 340 nC facilitate straightforward drive circuitry. Operating across a wide temperature range of -55°C to 150°C (TJ), the APT50GT120B2RDQ2G is packaged in a TO-247-3 through-hole mount, making it suitable for power factor correction, motor drives, and uninterruptible power supplies.
Additional Information
Series: Thunderbolt IGBT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 50A |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 24ns/230ns |
| Switching Energy | 2330µJ (off) |
| Test Condition | 800V, 50A, 4.7Ohm, 15V |
| Gate Charge | 340 nC |
| Current - Collector (Ic) (Max) | 94 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 625 W |
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