APT50GN60BG
IGBT TRENCH FS 600V 107A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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The Microchip Technology APT50GN60BG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component offers a collector-emitter breakdown voltage of 600 V and a continuous collector current of 107 A, with a pulsed current capability of 150 A. Featuring a maximum power dissipation of 366 W, it is optimized for efficient switching with a typical on-state voltage of 1.85 V at 15 V gate-emitter voltage and 50 A collector current. The gate charge is rated at 325 nC.
This Through Hole device, packaged in a TO-247-3 configuration, operates across a temperature range of -55°C to 175°C. Switching energy values are 1185 µJ (on) and 1565 µJ (off) under test conditions of 400 V, 50 A, 4.3 Ohms, and 15 V. The APT50GN60BG finds application in power factor correction, industrial motor drives, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 50A |
| Supplier Device Package | TO-247 [B] |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 20ns/230ns |
| Switching Energy | 1185µJ (on), 1565µJ (off) |
| Test Condition | 400V, 50A, 4.3Ohm, 15V |
| Gate Charge | 325 nC |
| Current - Collector (Ic) (Max) | 107 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 366 W |