APT50GN60BDQ3G
IGBT TRENCH FS 600V 107A TO247-3Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT50GN60BDQ3G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current rating of 107A, with a pulsed capability of 150A. Key performance parameters include a low on-state voltage (Vce(on)) of 1.85V at 15V gate-emitter voltage and 50A collector current, and a maximum power dissipation of 366W. The device features a gate charge of 325 nC and exhibits switching energies of 1.185mJ (on) and 1.565mJ (off) under specified test conditions (400V, 50A, 4.3 Ohm, 15V). With a low reverse recovery time (trr) of 35 ns, this IGBT is suitable for applications in industrial power supplies, motor control, and renewable energy systems. The APT50GN60BDQ3G is packaged in a TO-247-3 through-hole configuration and operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 35 ns |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 50A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 20ns/230ns |
| Switching Energy | 1.185mJ (on), 1.565mJ (off) |
| Test Condition | 400V, 50A, 4.3Ohm, 15V |
| Gate Charge | 325 nC |
| Current - Collector (Ic) (Max) | 107 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 366 W |
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