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APT50GN60BDQ3G

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APT50GN60BDQ3G

IGBT TRENCH FS 600V 107A TO247-3

Manufacturer: Microchip Technology

Categories: Single IGBTs

Quality Control: Learn More

Microchip Technology APT50GN60BDQ3G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current rating of 107A, with a pulsed capability of 150A. Key performance parameters include a low on-state voltage (Vce(on)) of 1.85V at 15V gate-emitter voltage and 50A collector current, and a maximum power dissipation of 366W. The device features a gate charge of 325 nC and exhibits switching energies of 1.185mJ (on) and 1.565mJ (off) under specified test conditions (400V, 50A, 4.3 Ohm, 15V). With a low reverse recovery time (trr) of 35 ns, this IGBT is suitable for applications in industrial power supplies, motor control, and renewable energy systems. The APT50GN60BDQ3G is packaged in a TO-247-3 through-hole configuration and operates across a temperature range of -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)35 ns
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 50A
Supplier Device PackageTO-247-3
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C20ns/230ns
Switching Energy1.185mJ (on), 1.565mJ (off)
Test Condition400V, 50A, 4.3Ohm, 15V
Gate Charge325 nC
Current - Collector (Ic) (Max)107 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)150 A
Power - Max366 W

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