APT50GN60BDQ2G
IGBT TRENCH FS 600V 107A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT50GN60BDQ2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power conversion. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 107A, with a pulsed capability of 150A. The device offers a low on-state voltage (Vce(on)) of 1.85V at 15V gate-source voltage and 50A collector current, minimizing conduction losses. Optimized switching characteristics include a gate charge of 325nC, with typical turn-on and turn-off delays of 20ns and 230ns respectively at 25°C. The maximum power dissipation is rated at 366W. This IGBT is housed in a TO-247-3 package for through-hole mounting, suitable for demanding applications across industrial motor control, power supplies, and electric vehicle powertrains. It operates across a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 50A |
| Supplier Device Package | TO-247 [B] |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 20ns/230ns |
| Switching Energy | 1185µJ (on), 1565µJ (off) |
| Test Condition | 400V, 50A, 4.3Ohm, 15V |
| Gate Charge | 325 nC |
| Current - Collector (Ic) (Max) | 107 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 366 W |