APT50GN120L2DQ2G
IGBT NPT FIELD STOP 1200V 134AManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT50GN120L2DQ2G is an NPT, Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage power applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 134 A, with a pulsed current capability of 150 A. The device offers a maximum power dissipation of 543 W and a low on-state voltage (Vce(on)) of 2.1V at 15V gate-source voltage and 50A collector current. Key switching characteristics include a gate charge of 315 nC and switching energy (Eoff) of 4495µJ (off) under test conditions of 800V, 50A, 2.2 Ohm, and 15V. The IGBT operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-264-3, TO-264AA package suitable for through-hole mounting. This component is utilized in industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| IGBT Type | NPT, Trench Field Stop |
| Td (on/off) @ 25°C | 28ns/320ns |
| Switching Energy | 4495µJ (off) |
| Test Condition | 800V, 50A, 2.2Ohm, 15V |
| Gate Charge | 315 nC |
| Current - Collector (Ic) (Max) | 134 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 543 W |
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