APT50GN120B2G
IGBT NPT FIELD STOP 1200V 134AManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT50GN120B2G is an NPT Trench Field Stop Insulated Gate Bipolar Transistor designed for high-voltage applications. This component offers a collector-emitter voltage (Vce) of 1200 V and a continuous collector current (Ic) of 134 A, with a pulsed capability up to 150 A. It features a maximum power dissipation of 543 W and a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate-source voltage and 50 A collector current. The component exhibits a gate charge of 315 nC and switching characteristics with turn-on delay (Td(on)) of 28 ns and turn-off delay (Td(off)) of 320 ns at 25°C, under test conditions of 800 V, 50 A, 2.2 Ohm, and 15 V. The APT50GN120B2G is housed in a TO-247-3 Variant package for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This device is suitable for power factor correction, electric vehicle charging, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| IGBT Type | NPT, Trench Field Stop |
| Td (on/off) @ 25°C | 28ns/320ns |
| Switching Energy | 4495µJ (off) |
| Test Condition | 800V, 50A, 2.2Ohm, 15V |
| Gate Charge | 315 nC |
| Current - Collector (Ic) (Max) | 134 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 543 W |
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