APT50GF120LRG
IGBT NPT 1200V 135A TO264Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT50GF120LRG is an NPT IGBT designed for high-power applications. This device features a collector-emitter breakdown voltage of 1200V and a continuous collector current (Ic) capability of 135A, with a pulsed current (Icm) up to 150A. The IGBT exhibits a maximum on-state voltage (Vce(on)) of 3V at 15V gate-emitter voltage and 50A collector current. With a maximum power dissipation of 781W and a gate charge of 340 nC, it is suitable for demanding switching applications. Switching energy is rated at 3.6mJ (on) and 2.64mJ (off) under test conditions of 800V, 50A, 1 Ohm, and 15V. The typical on and off times at 25°C are 25ns and 260ns, respectively. Packaged in a TO-264-3, TO-264AA (TO-264 [L]) through-hole configuration, this component operates across a temperature range of -55°C to 150°C. It is commonly utilized in power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 50A |
| Supplier Device Package | TO-264 [L] |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 25ns/260ns |
| Switching Energy | 3.6mJ (on), 2.64mJ (off) |
| Test Condition | 800V, 50A, 1Ohm, 15V |
| Gate Charge | 340 nC |
| Current - Collector (Ic) (Max) | 135 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 781 W |
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