APT50GF120B2RG
IGBT NPT 1200V 135AManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT50GF120B2RG is a Non-Punch-Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component offers a collector-emitter voltage rating of 1200V and a continuous collector current capability of 135A, with a pulsed current rating of 150A. The device dissipates a maximum power of 781W and features a low on-state voltage (Vce(on)) of 3V at 15V gate-emitter voltage and 50A collector current. Switching characteristics include typical turn-on delay (Td(on)) of 25ns and turn-off delay (Td(off)) of 260ns at 25°C, with corresponding switching energies of 3.6mJ (on) and 2.64mJ (off) under test conditions of 800V, 50A, 1 Ohm, and 15V. The gate charge for this device is 340 nC. The APT50GF120B2RG is housed in a TO-247-3 Variant package suitable for through-hole mounting, operating within a temperature range of -55°C to 150°C (TJ). This component is frequently utilized in power factor correction, industrial motor control, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 50A |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 25ns/260ns |
| Switching Energy | 3.6mJ (on), 2.64mJ (off) |
| Test Condition | 800V, 50A, 1Ohm, 15V |
| Gate Charge | 340 nC |
| Current - Collector (Ic) (Max) | 135 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 781 W |
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