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APT50GF120B2RG

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APT50GF120B2RG

IGBT NPT 1200V 135A

Manufacturer: Microchip Technology

Categories: Single IGBTs

Quality Control: Learn More

Microchip Technology APT50GF120B2RG is a Non-Punch-Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component offers a collector-emitter voltage rating of 1200V and a continuous collector current capability of 135A, with a pulsed current rating of 150A. The device dissipates a maximum power of 781W and features a low on-state voltage (Vce(on)) of 3V at 15V gate-emitter voltage and 50A collector current. Switching characteristics include typical turn-on delay (Td(on)) of 25ns and turn-off delay (Td(off)) of 260ns at 25°C, with corresponding switching energies of 3.6mJ (on) and 2.64mJ (off) under test conditions of 800V, 50A, 1 Ohm, and 15V. The gate charge for this device is 340 nC. The APT50GF120B2RG is housed in a TO-247-3 Variant package suitable for through-hole mounting, operating within a temperature range of -55°C to 150°C (TJ). This component is frequently utilized in power factor correction, industrial motor control, and electric vehicle powertrains.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3V @ 15V, 50A
IGBT TypeNPT
Td (on/off) @ 25°C25ns/260ns
Switching Energy3.6mJ (on), 2.64mJ (off)
Test Condition800V, 50A, 1Ohm, 15V
Gate Charge340 nC
Current - Collector (Ic) (Max)135 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)150 A
Power - Max781 W

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