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APT45GP120B2DQ2G

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APT45GP120B2DQ2G

IGBT PT 1200V 113A

Manufacturer: Microchip Technology

Categories: Single IGBTs

Quality Control: Learn More

IGBT PT 1200 V 113 A 625 W Through Hole

Additional Information

Series: POWER MOS 7®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 45A
IGBT TypePT
Td (on/off) @ 25°C18ns/100ns
Switching Energy900µJ (on), 905µJ (off)
Test Condition600V, 45A, 5Ohm, 15V
Gate Charge185 nC
Current - Collector (Ic) (Max)113 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)170 A
Power - Max625 W

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