APT44GA60BD30
IGBT PT 600V 78A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology's APT44GA60BD30 is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the POWER MOS 8™ series. This PT IGBT offers a collector-emitter voltage of 600V and a continuous collector current of 78A, with a pulsed capability of 130A. It features a low on-state voltage drop of 2.5V at 15V gate-emitter voltage and 26A collector current, with typical turn-on and turn-off times of 16ns and 84ns respectively. The device dissipates a maximum power of 337W and has a gate charge of 128nC. Designed for through-hole mounting in a TO-247-3 package, it operates across a wide temperature range from -55°C to 150°C. This component is suitable for applications in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 26A |
| Supplier Device Package | TO-247 [B] |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 16ns/84ns |
| Switching Energy | 409µJ (on), 258µJ (off) |
| Test Condition | 400V, 26A, 4.7Ohm, 15V |
| Gate Charge | 128 nC |
| Current - Collector (Ic) (Max) | 78 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 130 A |
| Power - Max | 337 W |
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