APT36GA60SD15
IGBT PT 600V 65A D3PAKManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology POWER MOS 8® APT36GA60SD15 is a 600V, 65A Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This PT type IGBT features a maximum collector current of 65A and a pulsed collector current of 109A. The device offers a low on-state voltage of 2.5V at 15V gate-emitter voltage and 20A collector current, with a Vce(on) optimization for reduced conduction losses. Its switching characteristics include typical turn-on delay (Td(on)) of 16ns and turn-off delay (Td(off)) of 122ns at 25°C, with a reverse recovery time (trr) of 19ns. The APT36GA60SD15 has a maximum power dissipation of 290W. Supplied in a surface mount D3PAK package (TO-268-3, D3PAK), this component is suitable for demanding applications in industrial motor drives, power supplies, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: POWER MOS 8®RoHS Status: unknownManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 19 ns |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | D3PAK |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 16ns/122ns |
| Switching Energy | 307µJ (on), 254µJ (off) |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Gate Charge | 102 nC |
| Current - Collector (Ic) (Max) | 65 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 109 A |
| Power - Max | 290 W |