APT36GA60B
IGBT PT 600V 65A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology's APT36GA60B is a high-performance Insulated Gate Bipolar Transistor (IGBT) from the POWER MOS 8™ series. This PT IGBT offers a collector-emitter voltage of 600V and a continuous collector current of 65A, with a pulsed capability of 109A. Designed for demanding applications, it dissipates a maximum power of 290W. The device features a standard input type and a low gate charge of 102 nC, contributing to efficient switching with typical on and off times of 16ns and 122ns respectively, as measured under a 400V, 20A, 10 Ohm load with 15V gate drive. Its collector-emitter on-voltage is 2.5V at 15V gate-emitter voltage and 20A collector current. The APT36GA60B is housed in a TO-247-3 package for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for power conversion and motor control applications in industries such as industrial automation and renewable energy.
Additional Information
Series: POWER MOS 8™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | TO-247 [B] |
| IGBT Type | PT |
| Td (on/off) @ 25°C | 16ns/122ns |
| Switching Energy | 307µJ (on), 254µJ (off) |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Gate Charge | 102 nC |
| Current - Collector (Ic) (Max) | 65 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 109 A |
| Power - Max | 290 W |
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