APT35GN120SG
IGBT NPT FS 1200V 94A D3PAKManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT35GN120SG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This NPT-type IGBT features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 94 A (105 A pulsed). With a low on-state voltage of 2.1 V at 15 V gate-emitter voltage and 35 A collector current, it offers efficient power handling. The device has a maximum power dissipation of 379 W and a gate charge of 220 nC. Operating across a temperature range of -55°C to 150°C (TJ), it is housed in a TO-268-3, D3PAK surface-mount package. This component is suitable for demanding power electronics applications such as industrial motor drives, renewable energy systems, and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 35A |
| Supplier Device Package | D3PAK |
| IGBT Type | NPT, Trench Field Stop |
| Td (on/off) @ 25°C | 24ns/300ns |
| Switching Energy | -, 2.315mJ (off) |
| Test Condition | 800V, 35A, 2.2Ohm, 15V |
| Gate Charge | 220 nC |
| Current - Collector (Ic) (Max) | 94 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 105 A |
| Power - Max | 379 W |
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