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APT35GN120L2DQ2G

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APT35GN120L2DQ2G

IGBT NPT FIELD STOP 1200V 94A

Manufacturer: Microchip Technology

Categories: Single IGBTs

Quality Control: Learn More

Microchip Technology APT35GN120L2DQ2G is a Trench Field Stop NPT IGBT with a collector-emitter breakdown voltage of 1200V. It offers a continuous collector current of 94A and a pulsed collector current of 105A. The device features a maximum power dissipation of 379W and a collector-emitter saturation voltage (Vce(on)) of 2.1V at 15V gate-source voltage and 35A collector current. Gate charge is specified at 220 nC. Switching characteristics include a turn-on delay (Td(on)) of 24ns and a turn-off delay (Td(off)) of 300ns at 25°C, with a switching energy of 2.315mJ (off) under test conditions of 800V, 35A, and 2.2 Ohms. This component is housed in a TO-264-3 package suitable for through-hole mounting and operates within a temperature range of -55°C to 150°C. Applications include power supplies, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 35A
IGBT TypeNPT, Trench Field Stop
Td (on/off) @ 25°C24ns/300ns
Switching Energy2.315mJ (off)
Test Condition800V, 35A, 2.2Ohm, 15V
Gate Charge220 nC
Current - Collector (Ic) (Max)94 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)105 A
Power - Max379 W

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