APT33GF120LRDQ2G
IGBT 1200V 64A 357W TO264Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT33GF120LRDQ2G is a Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 64 A, with a pulsed rating of 75 A. The device dissipates a maximum power of 357 W and exhibits a low on-state voltage of 3 V at 15 V gate-emitter voltage and 25 A collector current. Switching characteristics include turn-on delay of 14 ns and turn-off delay of 185 ns, with switching energy of 1.315 mJ (on) and 1.515 mJ (off) under test conditions of 800 V, 25 A, 4.3 Ohm, and 15 V. The gate charge is specified at 170 nC. Packaged in a TO-264 [L] through-hole configuration, this IGBT is suitable for demanding power conversion and control systems across various industrial sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 25A |
| Supplier Device Package | TO-264 [L] |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 14ns/185ns |
| Switching Energy | 1.315mJ (on), 1.515mJ (off) |
| Test Condition | 800V, 25A, 4.3Ohm, 15V |
| Gate Charge | 170 nC |
| Current - Collector (Ic) (Max) | 64 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 357 W |
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