APT33GF120B2RDQ2G
IGBT NPT 1200V 64AManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT33GF120B2RDQ2G is an NPT IGBT with a collector-emitter breakdown voltage of 1200 V. This component is rated for a continuous collector current (Ic) of 64 A, with a pulsed capability (Icm) of 75 A. It offers a maximum power dissipation of 357 W and features a low on-state voltage (Vce(on)) of 3 V at 15V Vge and 25A Ic. The gate charge is specified at 170 nC. Switching characteristics at 800V and 25A are Td(on) of 14ns and Td(off) of 185ns, with corresponding switching energies of 1.315mJ (on) and 1.515mJ (off). The APT33GF120B2RDQ2G is presented in a TO-247-3 Variant package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This device is commonly utilized in power conversion applications within the industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 25A |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 14ns/185ns |
| Switching Energy | 1.315mJ (on), 1.515mJ (off) |
| Test Condition | 800V, 25A, 4.3Ohm, 15V |
| Gate Charge | 170 nC |
| Current - Collector (Ic) (Max) | 64 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 357 W |
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