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APT30GT60BRDQ2G

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APT30GT60BRDQ2G

IGBT 600V 64A 250W TO247

Manufacturer: Microchip Technology

Categories: Single IGBTs

Quality Control: Learn More

The Microchip Technology APT30GT60BRDQ2G is a 600V NPT (Non-Punch Through) IGBT from the Thunderbolt IGBT® series. This component is designed for high-performance power switching applications, offering a continuous collector current (Ic) of 64A and a pulsed collector current (Icm) of 110A. With a maximum power dissipation of 250W and a collector-emitter saturation voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 30A collector current, it provides efficient operation. The device features a typical gate charge of 7.5 nC and exhibits switching energies of 80µJ (on) and 605µJ (off) under test conditions of 400V, 30A, 10 Ohm, and 15V. Its TO-247-3 package with through-hole mounting and an operating temperature range of -55°C to 150°C makes it suitable for demanding industrial environments, including power supplies, motor drives, and uninterruptible power systems. Reverse recovery time (trr) is rated at 22 ns.

Additional Information

Series: Thunderbolt IGBT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)22 ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
Supplier Device PackageTO-247 [B]
IGBT TypeNPT
Td (on/off) @ 25°C12ns/225ns
Switching Energy80µJ (on), 605µJ (off)
Test Condition400V, 30A, 10Ohm, 15V
Gate Charge7.5 nC
Current - Collector (Ic) (Max)64 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)110 A
Power - Max250 W

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