APT30GN60BG
IGBT TRENCH FS 600V 63A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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The Microchip Technology APT30GN60BG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT). This component offers a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 63 A, with a pulsed current rating (Icm) of 90 A. It features a low on-state voltage (Vce(on)) of 1.9V at 15V Vge and 30A Ic. The device is packaged in a TO-247-3 through-hole package, designed for efficient thermal management with a maximum power dissipation of 203 W. Key switching characteristics include a gate charge of 165 nC and switching energies of 525µJ (on) and 700µJ (off) under test conditions of 400V, 30A, 4.3 Ohms, and 15V. The operating temperature range is -55°C to 175°C (TJ). This IGBT is suitable for applications in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
| Supplier Device Package | TO-247 [B] |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 12ns/155ns |
| Switching Energy | 525µJ (on), 700µJ (off) |
| Test Condition | 400V, 30A, 4.3Ohm, 15V |
| Gate Charge | 165 nC |
| Current - Collector (Ic) (Max) | 63 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 203 W |
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