APT30GN60BDQ2G
IGBT TRENCH FS 600V 63A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT30GN60BDQ2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 63 A, with a pulsed current rating of 90 A. The IGBT type is Trench Field Stop, offering efficient switching characteristics with typically low switching energy values of 525µJ (on) and 700µJ (off) at specified test conditions. It exhibits a low on-state voltage drop of 1.9 V at 15 V gate-emitter voltage and 30 A collector current. The device has a maximum power dissipation of 203 W and a gate charge of 165 nC. The APT30GN60BDQ2G is packaged in a TO-247-3 through-hole configuration, suitable for mounting in demanding environments with an operating temperature range of -55°C to 175°C. This component is widely utilized in industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A |
| Supplier Device Package | TO-247 [B] |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 12ns/155ns |
| Switching Energy | 525µJ (on), 700µJ (off) |
| Test Condition | 400V, 30A, 4.3Ohm, 15V |
| Gate Charge | 165 nC |
| Current - Collector (Ic) (Max) | 63 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
| Power - Max | 203 W |
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