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APT30GN60BDQ2G

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APT30GN60BDQ2G

IGBT TRENCH FS 600V 63A TO247

Manufacturer: Microchip Technology

Categories: Single IGBTs

Quality Control: Learn More

Microchip Technology APT30GN60BDQ2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 63 A, with a pulsed current rating of 90 A. The IGBT type is Trench Field Stop, offering efficient switching characteristics with typically low switching energy values of 525µJ (on) and 700µJ (off) at specified test conditions. It exhibits a low on-state voltage drop of 1.9 V at 15 V gate-emitter voltage and 30 A collector current. The device has a maximum power dissipation of 203 W and a gate charge of 165 nC. The APT30GN60BDQ2G is packaged in a TO-247-3 through-hole configuration, suitable for mounting in demanding environments with an operating temperature range of -55°C to 175°C. This component is widely utilized in industries such as industrial power supplies, motor control, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 30A
Supplier Device PackageTO-247 [B]
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C12ns/155ns
Switching Energy525µJ (on), 700µJ (off)
Test Condition400V, 30A, 4.3Ohm, 15V
Gate Charge165 nC
Current - Collector (Ic) (Max)63 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)90 A
Power - Max203 W

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