APT25GT120BRDQ2G
IGBT NPT 1200V 54A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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The Microchip Technology APT25GT120BRDQ2G is a high-performance NPT IGBT from the Thunderbolt IGBT® series. This component offers a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 54A, with a pulsed capability of 75A. Designed for robust operation, it features a maximum power dissipation of 347W and an on-state voltage drop of 3.7V at 15V gate-source voltage and 25A collector current. Switching characteristics include a turn-on delay of 14ns and turn-off delay of 150ns at 25°C, with switching energy values of 930µJ (on) and 720µJ (off) under specified test conditions. With a gate charge of 170 nC and an operating temperature range of -55°C to 150°C, this through-hole device is packaged in a TO-247-3 configuration. Its specifications make it suitable for applications in industrial power supplies, motor control, and power factor correction.
Additional Information
Series: Thunderbolt IGBT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 25A |
| Supplier Device Package | TO-247 [B] |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 14ns/150ns |
| Switching Energy | 930µJ (on), 720µJ (off) |
| Test Condition | 800V, 25A, 5Ohm, 15V |
| Gate Charge | 170 nC |
| Current - Collector (Ic) (Max) | 54 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 347 W |
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