APT25GR120S
IGBT NPT 1200V 75A D3PAKManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT25GR120S is a 1200V, 75A Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component features a maximum collector current of 75A and a pulsed collector current of 100A, with a maximum power dissipation of 521W. The surface mount D3PAK package (TO-268-3, D3PAK) facilitates efficient thermal management. Key electrical characteristics include a Vce(on) of 3.2V at 15V/25A, and switching energies of 742µJ (on) and 427µJ (off) under test conditions of 600V, 25A, 4.3 Ohm, 15V. The gate charge is 203 nC, with typical turn-on and turn-off delays of 16ns and 122ns respectively at 25°C. This IGBT is suitable for operation across a wide temperature range from -55°C to 150°C. Industries utilizing this component include industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 25A |
| Supplier Device Package | D3PAK |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 16ns/122ns |
| Switching Energy | 742µJ (on), 427µJ (off) |
| Test Condition | 600V, 25A, 4.3Ohm, 15V |
| Gate Charge | 203 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 521 W |
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