APT25GR120BD15
IGBT NPT 1200V 75A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
Quality Control: Learn More
Microchip Technology APT25GR120BD15 is a Non-Punch-Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage switching applications. This component offers a collector-emitter voltage (Vce) breakdown of 1200V and a continuous collector current (Ic) rating of 75A at a pulsed current (Icm) of 100A. With a maximum power dissipation of 521W and a low on-state voltage (Vce(on)) of 3.2V at 25A and 15V gate drive, it ensures efficient operation. The device features a gate charge of 203 nC and exhibits typical switching times of 16ns turn-on and 122ns turn-off at 600V, 25A, and 4.3 Ohm. The APT25GR120BD15 is housed in a TO-247-3 package for through-hole mounting and operates across a wide temperature range of -55°C to 150°C. This IGBT is utilized in power electronics for applications such as motor control, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 25A |
| Supplier Device Package | TO-247 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 16ns/122ns |
| Switching Energy | 742µJ (on), 427µJ (off) |
| Test Condition | 600V, 25A, 4.3Ohm, 15V |
| Gate Charge | 203 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 521 W |
Request a Quote
Clients Also Buy
APT25GT120BRG
IGBT NPT 1200V 54A TO247
APT15GP90BDQ1G
IGBT PT 900V 43A TO247
APT36GA60B
IGBT PT 600V 65A TO247
