APT25GR120B
IGBT NPT 1200V 75A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT25GR120B is a Non-Punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a Collector-Emitter Voltage (Vce) breakdown of 1200 V and a continuous Collector Current (Ic) rating of 75 A, with a pulsed capability of 100 A. The device dissipates a maximum power of 521 W and exhibits a low on-state voltage (Vce(on)) of 3.2 V at 15 V gate-emitter voltage and 25 A collector current.
The APT25GR120B is characterized by its excellent switching performance, with typical turn-on delay (Td(on)) of 16 ns and turn-off delay (Td(off)) of 122 ns at 25°C under test conditions of 600 V, 25 A, and 4.3 Ohm. Switching energy is rated at 742 µJ (turn-on) and 427 µJ (turn-off). The IGBT has a gate charge of 203 nC. Packaged in a TO-247-3 through-hole configuration, this device operates across a wide temperature range of -55°C to 150°C (TJ). It is suitable for use in power conversion systems across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 25A |
| Supplier Device Package | TO-247 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 16ns/122ns |
| Switching Energy | 742µJ (on), 427µJ (off) |
| Test Condition | 600V, 25A, 4.3Ohm, 15V |
| Gate Charge | 203 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 100 A |
| Power - Max | 521 W |
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