APT25GN120SG/TR
IGBT TRENCH FS 1200V 67A D3PAKManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT25GN120SG-TR is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications. This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 67 A, with a pulsed capability of 75 A. The IGBT type is Trench Field Stop, offering efficient switching characteristics with a typical turn-on delay of 22 ns and turn-off delay of 280 ns at 25°C under a test condition of 800V, 25A, 1 Ohm, and 15V. Its on-state voltage (Vce(on)) is a maximum of 2.1V at 15V gate-emitter voltage and 25A collector current. With a maximum power dissipation of 272 W and a gate charge of 155 nC, the APT25GN120SG-TR is suitable for demanding power conversion systems. This device is provided in a TO-268-3, D3PAK surface mount package, designed for efficient thermal management and automated assembly. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 25A |
| Supplier Device Package | D3PAK |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 22ns/280ns |
| Switching Energy | -, 2.15J (off) |
| Test Condition | 800V, 25A, 1Ohm, 15V |
| Gate Charge | 155 nC |
| Current - Collector (Ic) (Max) | 67 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 272 W |
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