APT25GN120SG
IGBT TRENCH FS 1200V 67A D3PAKManufacturer: Microchip Technology
Categories: Single IGBTs
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The Microchip Technology APT25GN120SG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a 1200 V collector-emitter breakdown voltage and a continuous collector current rating of 67 A, with a pulsed rating of 75 A. The on-state voltage (Vce(on)) is a maximum of 2.1V at 15V gate-emitter voltage and 25A collector current. With a maximum power dissipation of 272 W and a typical switching speed of 22 ns turn-on and 280 ns turn-off at 800 V, 25 A, 1 Ohm, 15 V, this IGBT is suitable for demanding power conversion circuits. It is packaged in a D3PAK surface-mount configuration (TO-268-3, D3PAK) and operates across an industrial temperature range of -55°C to 150°C. This device is commonly utilized in power supplies, motor drives, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 25A |
| Supplier Device Package | D3PAK |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 22ns/280ns |
| Switching Energy | - |
| Test Condition | 800V, 25A, 1Ohm, 15V |
| Gate Charge | 155 nC |
| Current - Collector (Ic) (Max) | 67 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 272 W |
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