APT25GN120BG
IGBT TRENCH FS 1200V 67A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT25GN120BG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a collector-emitter breakdown voltage of 1200 V and a maximum continuous collector current of 67 A, with a pulsed current capability (Icm) of 75 A. The device exhibits a low on-state voltage (Vce(on)) of 2.1 V at 15 V gate-emitter voltage and 25 A collector current, with switching times (Td(on)/Td(off)) of 22 ns and 280 ns respectively at 25°C. With a maximum power dissipation of 272 W and a switching energy of 2.15 µJ (off), this IGBT is suitable for demanding power conversion systems. The TO-247-3 package facilitates through-hole mounting. This component finds application in industries such as industrial motor drives and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 25A |
| Supplier Device Package | TO-247 [B] |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 22ns/280ns |
| Switching Energy | 2.15µJ (off) |
| Test Condition | 800V, 25A, 1Ohm, 15V |
| Gate Charge | 155 nC |
| Current - Collector (Ic) (Max) | 67 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 272 W |
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