APT25GN120B2DQ2G
IGBT NPT FIELD STOP 1200V 67AManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT25GN120B2DQ2G is a Trench Field Stop NPT IGBT designed for high-voltage applications. This component offers a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 67 A, with a pulsed capability of 75 A. The device dissipates a maximum power of 272 W, featuring a low on-state voltage (Vce(on)) of 2.1V at 15V gate-source voltage and 25A collector current. Switching characteristics include an off-state switching energy of 2.15µJ and typical on/off delays of 22ns/280ns at 25°C. The gate charge is rated at 155 nC. Operating across an extended temperature range of -55°C to 150°C (TJ), this IGBT is housed in a TO-247-3 variant package and is supplied in tubes. Applications include power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 25A |
| IGBT Type | NPT, Trench Field Stop |
| Td (on/off) @ 25°C | 22ns/280ns |
| Switching Energy | 2.15µJ (off) |
| Test Condition | 800V, 25A, 4.3Ohm, 15V |
| Gate Charge | 155 nC |
| Current - Collector (Ic) (Max) | 67 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 75 A |
| Power - Max | 272 W |
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