APT20GN60SDQ2G
IGBT TRENCH FS 600V 40A D3PAKManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT20GN60SDQ2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This device features a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 40 A, with a pulsed current rating (Icm) of 60 A. The IGBT Type is Trench Field Stop, offering optimized switching performance characterized by low on-state voltage (Vce(on) Max of 1.9V @ 15V, 20A) and low switching energy (230µJ on, 580µJ off). The device has a maximum power dissipation of 136 W and a gate charge of 120 nC. It is available in a TO-268-3, D3PAK (2 Leads + Tab), TO-268AA package for surface mounting. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for use in industrial, automotive, and power supply industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 20A |
| Supplier Device Package | D3PAK |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 9ns/140ns |
| Switching Energy | 230µJ (on), 580µJ (off) |
| Test Condition | 400V, 20A, 4.3Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 136 W |
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