APT20GN60BG
IGBT TRENCH FS 600V 40A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
Quality Control: Learn More
Microchip Technology APT20GN60BG is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power conversion applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 40A (60A pulsed). With a low on-state voltage of 1.9V at 15V gate-emitter voltage and 20A collector current, it minimizes conduction losses. The device offers fast switching characteristics with typical on-delay of 9ns and off-delay of 140ns, and switching energies of 230µJ on and 580µJ off, measured at 400V, 20A. It has a maximum power dissipation of 136W and a gate charge of 120nC. The APT20GN60BG is packaged in a TO-247-3 through-hole package, suitable for demanding thermal management. This IGBT is commonly employed in industrial motor drives, uninterruptible power supplies (UPS), and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 20A |
| Supplier Device Package | TO-247 [B] |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 9ns/140ns |
| Switching Energy | 230µJ (on), 580µJ (off) |
| Test Condition | 400V, 20A, 4.3Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 136 W |
Request a Quote
Clients Also Buy
APT25GP90BG
IGBT PT 900V 72A TO247
APT102GA60B2
IGBT 600V 183A 780W TO247
APT40GP60BG
IGBT PT 600V 100A TO247
