APT20GN60BDQ2G
IGBT TRENCH FS 600V 40A TO247-3Manufacturer: Microchip Technology
Categories: Single IGBTs
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The Microchip Technology APT20GN60BDQ2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 60 A. It offers a maximum power dissipation of 136 W. The IGBT type utilizes Trench Field Stop technology for optimized switching characteristics, evidenced by a typical on-state voltage (Vce(on)) of 1.9V at 15V gate-source voltage and 20A collector current. Switching energy is rated at 230µJ (on) and 580µJ (off) under specified test conditions (400V, 20A, 4.3O, 15V), with typical turn-on delay (Td(on)) of 9ns and turn-off delay (Td(off)) of 140ns at 25°C. The device is housed in a TO-247-3 package, suitable for through-hole mounting, and operates within an extended temperature range of -55°C to 175°C. This component is commonly employed in industrial motor drives and power factor correction circuits.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 20A |
| Supplier Device Package | TO-247-3 |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 9ns/140ns |
| Switching Energy | 230µJ (on), 580µJ (off) |
| Test Condition | 400V, 20A, 4.3Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 136 W |
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