APT20GN60BDQ1G
IGBT TRENCH FS 600V 40A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT20GN60BDQ1G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage, high-current applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 60 A. The device dissipates a maximum of 136 W and offers a low on-state voltage of 1.9 V at 15 V gate drive and 20 A collector current. Switching characteristics include turn-on and turn-off delays of 9 ns and 140 ns respectively, with corresponding switching energies of 230 µJ (on) and 580 µJ (off) under test conditions of 400 V, 20 A, 4.3 Ohm, and 15 V gate drive. The gate charge is specified at 120 nC. This IGBT is packaged in a TO-247-3 through-hole configuration, suitable for demanding thermal management. It operates across an extended temperature range of -55°C to 175°C (TJ). Applications for this device include power supplies, motor drives, and welding equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 20A |
| Supplier Device Package | TO-247 [B] |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 9ns/140ns |
| Switching Energy | 230µJ (on), 580µJ (off) |
| Test Condition | 400V, 20A, 4.3Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 136 W |
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