APT200GN60B2G
IGBT TRENCH FIELD STOP 600V 283AManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT200GN60B2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) with a 600 V collector-emitter breakdown voltage. This component is rated for a continuous collector current of 283 A and a pulsed collector current of 600 A. The maximum power dissipation is 682 W. Key switching parameters include a gate charge of 1180 nC, with turn-on delay (Td(on)) of 50 ns and turn-off delay (Td(off)) of 560 ns at 25°C, tested at 400 V, 200 A, 1 Ohm, and 15 V. On-state voltage (Vce(on)) is a maximum of 1.85 V at 15 V gate-source voltage and 200 A collector current. Switching energy is specified at 13 mJ during turn-on and 11 mJ during turn-off. This IGBT is housed in a TO-247-3 package, designed for through-hole mounting, and operates across an extended temperature range of -55°C to 175°C. It is suitable for applications in high-power conversion and motor control systems. The component is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 200A |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 50ns/560ns |
| Switching Energy | 13mJ (on), 11mJ (off) |
| Test Condition | 400V, 200A, 1Ohm, 15V |
| Gate Charge | 1180 nC |
| Current - Collector (Ic) (Max) | 283 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 600 A |
| Power - Max | 682 W |
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