APT15GT120BRDQ1G
IGBT NPT 1200V 36A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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The Microchip Technology APT15GT120BRDQ1G is a Thunderbolt IGBT® device featuring Non-Punch Through (NPT) technology. This component offers a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 36 A, with a pulsed capability of 45 A. Optimized for high-power switching applications, it dissipates a maximum power of 250 W. Key performance parameters include a gate charge of 105 nC and low switching energies of 585 µJ (turn-on) and 260 µJ (turn-off) at 800 V, 15 A, with a 5 Ohm load and 15 V gate drive, yielding typical turn-on and turn-off delays of 10 ns and 85 ns respectively. The on-state voltage drop (Vce(on)) is specified at 3.6 V maximum for a 15 V gate drive and 15 A collector current. Designed for through-hole mounting, this IGBT is housed in a TO-247-3 package and operates across a temperature range of -55°C to 150°C (TJ). This device is suitable for applications in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: Thunderbolt IGBT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 15A |
| Supplier Device Package | TO-247 [B] |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 10ns/85ns |
| Switching Energy | 585µJ (on), 260µJ (off) |
| Test Condition | 800V, 15A, 5Ohm, 15V |
| Gate Charge | 105 nC |
| Current - Collector (Ic) (Max) | 36 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 45 A |
| Power - Max | 250 W |
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