APT15GN120BDQ1G
IGBT TRENCH FS 1200V 45A TO247Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology's APT15GN120BDQ1G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT). This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 45 A, with a pulsed current capability also at 45 A. The device offers a maximum power dissipation of 195 W and a low on-state voltage drop of 2.1 V at 15 V gate-emitter voltage and 15 A collector current. Switching characteristics include an on-time of 10 ns and off-time of 150 ns at 25°C, with switching energy values of 410 µJ on and 950 µJ off, tested under 800 V, 15 A, 4.3 Ohm, and 15 V conditions. The gate charge is rated at 90 nC. This IGBT is housed in a TO-247-3 package suitable for through-hole mounting and operates across a wide temperature range of -55°C to 150°C. It finds application in power electronics for industries such as industrial motor drives, renewable energy systems, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 15A |
| Supplier Device Package | TO-247 [B] |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 10ns/150ns |
| Switching Energy | 410µJ (on), 950µJ (off) |
| Test Condition | 800V, 15A, 4.3Ohm, 15V |
| Gate Charge | 90 nC |
| Current - Collector (Ic) (Max) | 45 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 45 A |
| Power - Max | 195 W |
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