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APT15GN120BDQ1G

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APT15GN120BDQ1G

IGBT TRENCH FS 1200V 45A TO247

Manufacturer: Microchip Technology

Categories: Single IGBTs

Quality Control: Learn More

Microchip Technology's APT15GN120BDQ1G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT). This component features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 45 A, with a pulsed current capability also at 45 A. The device offers a maximum power dissipation of 195 W and a low on-state voltage drop of 2.1 V at 15 V gate-emitter voltage and 15 A collector current. Switching characteristics include an on-time of 10 ns and off-time of 150 ns at 25°C, with switching energy values of 410 µJ on and 950 µJ off, tested under 800 V, 15 A, 4.3 Ohm, and 15 V conditions. The gate charge is rated at 90 nC. This IGBT is housed in a TO-247-3 package suitable for through-hole mounting and operates across a wide temperature range of -55°C to 150°C. It finds application in power electronics for industries such as industrial motor drives, renewable energy systems, and uninterruptible power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 15A
Supplier Device PackageTO-247 [B]
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C10ns/150ns
Switching Energy410µJ (on), 950µJ (off)
Test Condition800V, 15A, 4.3Ohm, 15V
Gate Charge90 nC
Current - Collector (Ic) (Max)45 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)45 A
Power - Max195 W

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