APT150GN60LDQ4G
IGBT TRENCH FS 600V 220A TO264Manufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT150GN60LDQ4G Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power conversion. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 220A (Ic), with a pulsed capability of 450A (Icm). The IGBT Type is Trench Field Stop, offering optimized switching characteristics with low on-state voltage (Vce(on) max of 1.85V at 15V, 150A) and switching energy (8.81mJ on, 4.295mJ off). It is packaged in a TO-264 [L] through-hole mount, suitable for demanding applications. The maximum power dissipation is 536W, and it operates across a wide temperature range of -55°C to 175°C (TJ). This device is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 150A |
| Supplier Device Package | TO-264 [L] |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 44ns/430ns |
| Switching Energy | 8.81mJ (on), 4.295mJ (off) |
| Test Condition | 400V, 150A, 1Ohm, 15V |
| Gate Charge | 970 nC |
| Current - Collector (Ic) (Max) | 220 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 450 A |
| Power - Max | 536 W |
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