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APT150GN60LDQ4G

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APT150GN60LDQ4G

IGBT TRENCH FS 600V 220A TO264

Manufacturer: Microchip Technology

Categories: Single IGBTs

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Microchip Technology APT150GN60LDQ4G Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power conversion. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 220A (Ic), with a pulsed capability of 450A (Icm). The IGBT Type is Trench Field Stop, offering optimized switching characteristics with low on-state voltage (Vce(on) max of 1.85V at 15V, 150A) and switching energy (8.81mJ on, 4.295mJ off). It is packaged in a TO-264 [L] through-hole mount, suitable for demanding applications. The maximum power dissipation is 536W, and it operates across a wide temperature range of -55°C to 175°C (TJ). This device is commonly utilized in industrial motor drives, power supplies, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 150A
Supplier Device PackageTO-264 [L]
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C44ns/430ns
Switching Energy8.81mJ (on), 4.295mJ (off)
Test Condition400V, 150A, 1Ohm, 15V
Gate Charge970 nC
Current - Collector (Ic) (Max)220 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)450 A
Power - Max536 W

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