APT150GN60B2G
IGBT TRENCH FIELD STOP 600V 220AManufacturer: Microchip Technology
Categories: Single IGBTs
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Microchip Technology APT150GN60B2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component offers a 600 V collector-emitter breakdown voltage and a continuous collector current of 220 A, with a pulsed capability of 450 A. It features a maximum power dissipation of 536 W and a low on-state voltage (Vce(on)) of 1.85 V at 150 A and 15 V gate drive. The device exhibits switching characteristics with turn-on delay (Td(on)) of 44 ns and turn-off delay (Td(off)) of 430 ns at 25°C, with corresponding switching energies of 8.81 mJ (on) and 4.295 mJ (off). Designed with a standard input type and a gate charge of 970 nC, this IGBT is housed in a TO-247-3 Variant package for through-hole mounting. Its operating temperature range is -55°C to 175°C (TJ). This component is suitable for use in power conversion systems, industrial motor drives, and renewable energy applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 150A |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | 44ns/430ns |
| Switching Energy | 8.81mJ (on), 4.295mJ (off) |
| Test Condition | 400V, 150A, 1Ohm, 15V |
| Gate Charge | 970 nC |
| Current - Collector (Ic) (Max) | 220 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 450 A |
| Power - Max | 536 W |
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