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APT150GN60B2G

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APT150GN60B2G

IGBT TRENCH FIELD STOP 600V 220A

Manufacturer: Microchip Technology

Categories: Single IGBTs

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Microchip Technology APT150GN60B2G is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This component offers a 600 V collector-emitter breakdown voltage and a continuous collector current of 220 A, with a pulsed capability of 450 A. It features a maximum power dissipation of 536 W and a low on-state voltage (Vce(on)) of 1.85 V at 150 A and 15 V gate drive. The device exhibits switching characteristics with turn-on delay (Td(on)) of 44 ns and turn-off delay (Td(off)) of 430 ns at 25°C, with corresponding switching energies of 8.81 mJ (on) and 4.295 mJ (off). Designed with a standard input type and a gate charge of 970 nC, this IGBT is housed in a TO-247-3 Variant package for through-hole mounting. Its operating temperature range is -55°C to 175°C (TJ). This component is suitable for use in power conversion systems, industrial motor drives, and renewable energy applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 150A
IGBT TypeTrench Field Stop
Td (on/off) @ 25°C44ns/430ns
Switching Energy8.81mJ (on), 4.295mJ (off)
Test Condition400V, 150A, 1Ohm, 15V
Gate Charge970 nC
Current - Collector (Ic) (Max)220 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)450 A
Power - Max536 W

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